InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
Identifieur interne : 000472 ( Russie/Analysis ); précédent : 000471; suivant : 000473InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
Auteurs : RBID : Pascal:04-0202845Descripteurs français
- Pascal (Inist)
- Photoluminescence, Préparation surface, Effet Zeeman, Décomposition niveau énergie, Champ extérieur, Effet champ magnétique, Impureté, Addition manganèse, Electronique spin, Semiconducteur semimagnétique, Indium arséniure, Zinc tellurure, Cadmium séléniure, Puits quantique, Hétérostructure, Etude expérimentale, CdSe:Mn, Cd Se, ZnTe:Mn, 7867D, Te Zn.
English descriptors
- KwdEn :
- Cadmium selenides, Energy-level splitting, Experimental study, External fields, Heterostructures, Impurities, Indium arsenides, Magnetic field effects, Manganese additions, Photoluminescence, Quantum wells, Semimagnetic semiconductors, Spintronics, Surface preparation, Zeeman effect, Zinc tellurides.
Abstract
Zn(Mn)Te/Cd(Mn)Se quantum well heterostructures have been grown pseudomorphically on InAs(001) substrates using original InAs surface preparation techniques. The structures demonstrated bright PL in the 1-1.3 eV range and the effect of giant Zeeman splitting in the external magnetic field.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00B919
- to stream Main, to step Repository: 00B398
- to stream Russie, to step Extraction: 000472
Links to Exploration step
Pascal:04-0202845Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications</title><author><name sortKey="Toropov, A A" uniqKey="Toropov A">A. A. Toropov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Terent Ev, Ya V" uniqKey="Terent Ev Y">Ya. V. Terent Ev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Shubina, T V" uniqKey="Shubina T">T. V. Shubina</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Sorokin, S V" uniqKey="Sorokin S">S. V. Sorokin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Sedova, I V" uniqKey="Sedova I">I. V. Sedova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kaygorodov, V A" uniqKey="Kaygorodov V">V. A. Kaygorodov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Solov Ev, V A" uniqKey="Solov Ev V">V. A. Solov Ev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Mel Tser, B Ya" uniqKey="Mel Tser B">B. Ya. Mel Tser</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Ivanov, S V" uniqKey="Ivanov S">S. V. Ivanov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kop Ev, P S" uniqKey="Kop Ev P">P. S. Kop Ev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Buyanova, I A" uniqKey="Buyanova I">I. A. Buyanova</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dept. of Physics and Measurement Technology, Linköping University</s1><s2>581 83 Linköping</s2><s3>SWE</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>581 83 Linköping</wicri:noRegion></affiliation></author><author><name sortKey="Chen, W M" uniqKey="Chen W">W. M. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dept. of Physics and Measurement Technology, Linköping University</s1><s2>581 83 Linköping</s2><s3>SWE</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>581 83 Linköping</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0202845</idno><date when="2004">2004</date><idno type="stanalyst">PASCAL 04-0202845 INIST</idno><idno type="RBID">Pascal:04-0202845</idno><idno type="wicri:Area/Main/Corpus">00B919</idno><idno type="wicri:Area/Main/Repository">00B398</idno><idno type="wicri:Area/Russie/Extraction">000472</idno></publicationStmt><seriesStmt><idno type="ISSN">0370-1972</idno><title level="j" type="abbreviated">Phys. status solidi, B, Basic res.</title><title level="j" type="main">Physica status solidi. B. Basic research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium selenides</term><term>Energy-level splitting</term><term>Experimental study</term><term>External fields</term><term>Heterostructures</term><term>Impurities</term><term>Indium arsenides</term><term>Magnetic field effects</term><term>Manganese additions</term><term>Photoluminescence</term><term>Quantum wells</term><term>Semimagnetic semiconductors</term><term>Spintronics</term><term>Surface preparation</term><term>Zeeman effect</term><term>Zinc tellurides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term><term>Préparation surface</term><term>Effet Zeeman</term><term>Décomposition niveau énergie</term><term>Champ extérieur</term><term>Effet champ magnétique</term><term>Impureté</term><term>Addition manganèse</term><term>Electronique spin</term><term>Semiconducteur semimagnétique</term><term>Indium arséniure</term><term>Zinc tellurure</term><term>Cadmium séléniure</term><term>Puits quantique</term><term>Hétérostructure</term><term>Etude expérimentale</term><term>CdSe:Mn</term><term>Cd Se</term><term>ZnTe:Mn</term><term>7867D</term><term>Te Zn</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Zn(Mn)Te/Cd(Mn)Se quantum well heterostructures have been grown pseudomorphically on InAs(001) substrates using original InAs surface preparation techniques. The structures demonstrated bright PL in the 1-1.3 eV range and the effect of giant Zeeman splitting in the external magnetic field.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0370-1972</s0></fA01><fA02 i1="01"><s0>PSSBBD</s0></fA02><fA03 i2="1"><s0>Phys. status solidi, B, Basic res.</s0></fA03><fA05><s2>241</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications</s1></fA08><fA11 i1="01" i2="1"><s1>TOROPOV (A. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>TERENT'EV (Ya. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHUBINA (T. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>SOROKIN (S. V.)</s1></fA11><fA11 i1="05" i2="1"><s1>SEDOVA (I. V.)</s1></fA11><fA11 i1="06" i2="1"><s1>KAYGORODOV (V. A.)</s1></fA11><fA11 i1="07" i2="1"><s1>SOLOV'EV (V. A.)</s1></fA11><fA11 i1="08" i2="1"><s1>MEL'TSER (B. Ya.)</s1></fA11><fA11 i1="09" i2="1"><s1>IVANOV (S. V.)</s1></fA11><fA11 i1="10" i2="1"><s1>KOP'EV (P. S.)</s1></fA11><fA11 i1="11" i2="1"><s1>BUYANOVA (I. A.)</s1></fA11><fA11 i1="12" i2="1"><s1>CHEN (W. M.)</s1></fA11><fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>Dept. of Physics and Measurement Technology, Linköping University</s1><s2>581 83 Linköping</s2><s3>SWE</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ></fA14><fA20><s1>704-707</s1></fA20><fA21><s1>2004</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183B</s2><s5>354000116975890570</s5></fA43><fA44><s0>0000</s0><s1>© 2004 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>4 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>04-0202845</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. B. Basic research</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>Zn(Mn)Te/Cd(Mn)Se quantum well heterostructures have been grown pseudomorphically on InAs(001) substrates using original InAs surface preparation techniques. The structures demonstrated bright PL in the 1-1.3 eV range and the effect of giant Zeeman splitting in the external magnetic field.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H67D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Préparation surface</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Surface preparation</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Preparación superficie</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Effet Zeeman</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Zeeman effect</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Décomposition niveau énergie</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Energy-level splitting</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Champ extérieur</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>External fields</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet champ magnétique</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Magnetic field effects</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Impureté</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Impurities</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Addition manganèse</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Manganese additions</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Electronique spin</s0><s5>12</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Spintronics</s0><s5>12</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Electrónica de espin</s0><s5>12</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur semimagnétique</s0><s5>13</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semimagnetic semiconductors</s0><s5>13</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Zinc tellurure</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Zinc tellurides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Cadmium séléniure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Cadmium selenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Puits quantique</s0><s5>19</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Quantum wells</s0><s5>19</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>20</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Heterostructures</s0><s5>20</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>21</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Experimental study</s0><s5>21</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>CdSe:Mn</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Cd Se</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>ZnTe:Mn</s0><s4>INC</s4><s5>55</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>7867D</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Te Zn</s0><s4>INC</s4><s5>92</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>48</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>48</s5></fC07><fN21><s1>138</s1></fN21><fN82><s1>PSI</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on II-VI Compounds (II-VI 2003)</s1><s2>11</s2><s3>Niagara Falls, New York USA</s3><s4>2003-09-22</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000472 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000472 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Russie
|étape= Analysis
|type= RBID
|clé= Pascal:04-0202845
|texte= InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
}}
| This area was generated with Dilib version V0.5.77. |  |